V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth

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V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth

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© The Institution of Electrical Engineers
Published

GaAs m.e.s.f.e.t. structures with high-resistivity buffer layers were prepared by introducing oxygen into the deposition system during growth. The electrical properties of the buffer layers are independent of the oxygen content of the gas phase over a large range of partial pressures. The characteristics of devices prepared with such layers are excellent.

Inspec keywords: Schottky gate field effect transistors; gallium arsenide; vapour phase epitaxial growth

Other keywords: GaAs; MESFET; deposition system; gas phase; buffer layer growth; VPE

Subjects: Other field effect devices; Epitaxial growth

References

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