http://iet.metastore.ingenta.com
1887

Planar photodiodes made from vapour-phase epitaxial InxGa1−xAs

Planar photodiodes made from vapour-phase epitaxial InxGa1−xAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Planar photodiodes for the 1.0–1.3 μm wavelength range have been fabricated by diffusing Zn into vapour-phase epitaxial InxGa1−xAs grown on a GaAs substrate. For compositions x=0−0.31, the dark current and spectral response are reported. The dark-current density for x=0.17 was as low as 5.4 × 10−6 A/cm2 at VB/2.

References

    1. 1)
      • M. Horiguchi , H. Osanai . Spectral losses of low-OH-conlent optical fibre. Electron. Lett. , 310 - 312
    2. 2)
      • D.N. Payne , W.A. Gambling . Zero material dispersion in optical fibres. Electron. Lett. , 176 - 178
    3. 3)
      • T. Kimura , K. Daikoku . A proposal on optical fibre transmission systems in a low-loss 1.0–1.4 μm wavelength region. Opt. & Quantum Electron. , 33 - 42
    4. 4)
      • H. Ando , H. Kanbe , T. Kimura , T. Kaneda . Characteristics of germanium avalanche photodiodes in the wavelength region of 1–1.6 μm. IEEE Trans. , 804 - 809
    5. 5)
      • Pearshall, T.P., Duda, E., Papuchon, M., Roullet, G.: `A high performance avalanche photodiode at 1.0–1.7 μm, compatible with InP/Ga', Topical meeting on integrated and guided wave optics, 1977, p. MC2-1̃MC2-3.
    6. 6)
      • T.P. Pearsall , M. papughon . The Ga0.47In0.53As homojunction photodiode—a new avalanche photodetector in the near infrared between 1.0 and 1.6μm. Appl. Phys. Lett. , 640 - 642
    7. 7)
      • Y. Takanashi , Y. Horikoshi . InGaAsP/InP avalanche photodiode. Japan J. Appl. Phys. , 2065 - 2066
    8. 8)
      • G.E. Stillman , C.M. Wolfe , A.G. Foyt , W.T. Lindley . Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm. Appl. Phys. Lett. , 8 - 10
    9. 9)
      • Boissy, M.C., Digvet, D., Hallais, J., Schemali, C.: `An efficient GaInAs photo-diode for near-infrared detection', Gallium arsenide and related compounds conference, 1976, p. 427–436, (Inst. Phys. Conf. Ser. 33a).
    10. 10)
      • Ahmad, K., Mabbitt, A.W.: `Ga', Technical digest, international electron device meeting, 1978, p. 646–648.
    11. 11)
      • M. Ettenberg , C.J. Nuese , J.R. Appert , J.J. Gannon , R.E. Enstrom . Metallurgical and electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs. J. Electron. Mater. , 37 - 66
    12. 12)
      • Y. Yamamoto , H. Kanbe . Diffusion of Zn in InGaAs.
    13. 13)
      • J. Conradi . Planar germanium photodiodes. Appl. Opt. , 1948 - 1952
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19790169
Loading

Related content

content/journals/10.1049/el_19790169
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address