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Simple model of large-signal properties of 1 W f.e.t. at 5 GHz

Simple model of large-signal properties of 1 W f.e.t. at 5 GHz

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Extensive large-signal measurements performed on a 1 W microwave f.e.t. at 5 GHz verify that its added-power characteristics can be accurately predicted from a simple analytic model requiring only two large-signal measurements for each frequency of interest. This model makes possible the use of linear circuit theory to design broadband matching circuits for optimum added-power performance.

References

    1. 1)
      • K.L. Kotzebue . Design technique for microwave transistor power amplifiers. Electron. Lett. , 74 - 75
    2. 2)
      • K.L. Kotzebue , E.R. Ehlers . A design technique for broadband microwave transistor power amplifiers. IEE J. Microwaves, Opt. & Acoust.
    3. 3)
      • R.S. Carson . (1975) , High-frequency amplifiers.
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