Higher output power from BARITT diodes using ion implantation

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Higher output power from BARITT diodes using ion implantation

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© The Institution of Electrical Engineers
Published

Phosphorus-ion implantation has been used in simple m-n-p+ Baritt diodes to controllably modify electric-field profiles and give increased output power.

Inspec keywords: phosphorus; ion implantation; BARITT diodes

Other keywords: increased output power; electric field profile control; metal-n-p+ devices; simple m-n-p+ Baritt diodes; P ion implantation

Subjects: Solid-state microwave circuits and devices; Semiconductor doping; Junction and barrier diodes

References

    1. 1)
      • J.A.C. Stewart . p+-n-p+Baritt diode design. Electron. Lett. , 460 - 461
    2. 2)
      • B.M. Armstrong , R.A. Moore , H.S. Gamble , J. Wakefield . A technique for fabricating oxide passivated Baritt diodes. J. Elec trochem. Soc. , 1462 - 1463
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