© The Institution of Electrical Engineers
A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19790032
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