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Electron-beam annealing of ion-implanted silicon

Electron-beam annealing of ion-implanted silicon

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A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.

References

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      • R.T. Young , C.W. White , J. Narayan , G.J. Clark , W.H. Christie , P.A. Barnes , G.A. Rozgonyi . (1978) Characterization of boron-implanted laser-annealed silicon, Semiconductor characterization techniques.
    2. 2)
      • G.L. Miller , J.L. Benton , L.C. Kimerling , D.A.H. Robinson , J.W. Rodgers , G.K. Celler . Electrical properties of ion implanted, Nd: YAG laser annealed, single crystal silicon.
    3. 3)
      • A. Gat , J.F. Gibbons . A laser-scanning apparatus for the annealing of ion implantation damage in semiconductors. Appl. Phys. Lett. , 142 - 143
    4. 4)
      • A.R. Kirkpatrick , G. Ryding . (1978) , Ion implantation for large scale automated production of solar electric cells.
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