Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Discharge mechanisms in floating-gate e.p.r.o.m. cells

Discharge mechanisms in floating-gate e.p.r.o.m. cells

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Measurements of charge loss from floating-gate e.p.r.o.m. cells have been made at low temperatures by applying terminal voltages to accelerate the discharge. The results strongly suggest that the operative mechanism is electronic tunnelling, implying that it is not possible to make a simple Arrhenius extrapolation from high-temperature storage experiments to service conditions.

Inspec keywords: integrated memory circuits; read-only storage; field effect integrated circuits

Other keywords: low temperature discharge rate measurements; discharge mechanisms; floating gate EPROM cells; electronic tunnelling

Subjects: Semiconductor storage; Other field effect integrated circuits; Memory circuits

References

    1. 1)
      • Alexander, R.M.: `Accelerated testing in FAMOS devices—8K e.p.r.o.m.', Proceedings of the IEEE 16th annual rel. phys. symposium, 1978, p. 229–232.
    2. 2)
      • R.M. Anderson , D.R. Kerr . Evidence of surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon. J. Appl. Phys. , 4834 - 4836
    3. 3)
      • Abbas, S.A., Barile, C.A., Dockerty, R.C.: `Conductivity of polyoxide', Extended abstracts of the Electrochemical Society fall meeting, 1976, 76, p. 842–843.
    4. 4)
      • J.J. Barnes , J.L. Linden , J.R. Edwards . Operation and characterization of N-channel EPROM cells. Solid-State Electron. , 521 - 529
    5. 5)
      • M. Lenzlinger , E.H. Snow . Fowler-Nordheim tunnelling into thermally grown SiO2. J. Appl. Phys. , 278 - 283
    6. 6)
      • D. Frohman-Bentchkowsky . FAMOS—a new semiconductor charge storage device. Solid-State Electron. , 517 - 529
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19790015
Loading

Related content

content/journals/10.1049/el_19790015
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address