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Power-handling capability of GaAs m.e.s.f.e.t.s

Power-handling capability of GaAs m.e.s.f.e.t.s

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The limits in output power and power gain are considered with and without a stationary dipole domain in the channel. It follows that c.w. power levels of 5 W/mm and power gains normalised on frequency as high as 60 dBGHz2 are possible for gate lengths of 1 μm.

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