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Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs

Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs

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In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.

References

    1. 1)
      • B.R. Pruniaux , A.C. Adams . Dependence of barrier height of metal semiconductor contacts (Au–GaAs) on thickness of semiconductor surface layer. J. Appl. Phys. , 1980 - 1982
    2. 2)
      • H-C. Card , E.H. Rhoderick . Studies of tunnel MOS diodes. I: Interface effects in silicon Schottky diodes. J. Phys. D. , 1589 - 1601
    3. 3)
      • O. Wada , A. Majerfeld . Low leakage nearly ideal Schottky Barriers to n–InP. Electron. Lett. , 125 - 126
    4. 4)
      • S. Ashok , J.M. Borrego , R.J. Gutman . A note on the evaluation of Schottky-diode parameters in the presence of an interfacial layer. Electron. Lett. , 332 - 333
    5. 5)
      • D.V. Morgan , J. Frey . The modification of the effective metal/semiconductor barrier heights by interfacial oxides. Physica Status Solidi
    6. 6)
      • E.H. Nicollian , B. Schwartz , D.J. Coleman , R.M. Ryder , J.R. Brews . Influence of a thin oxide layer between metal and semiconductor on Schottky-diode behaviour. J. Vac. Sci. Technol. , 1047 - 1055
    7. 7)
      • G. Dearnaley , A.M. Storeham , D.V. Morgan . Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. , 1129 - 1191
    8. 8)
      • K. Kajiyama , Y. Mizushima , S. Sakata . Schottky-Barrier height on n-InxGa1−xAs diodes. Appl. Phys. Lett. , 458 - 459
    9. 9)
      • Sasaki, A., Takeda, Y., Shikagawa, N., Takagi, T.: `Liquid phase epitaxial growth, electron mobility and maximum drift velocity of In', Proceedings of the solid-state devices conference, September 1976, Tokyo, Japan.
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