Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs

Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs

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In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.


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