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Millimetre-wave switching by optically generated plasma in silicon

Millimetre-wave switching by optically generated plasma in silicon

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Optoelectronic switching and gating of millimetre-wave signals at 94 GHz by optically generated plasma in silicon dielectric waveguides are reported. A pulsewidth for millimeter-wave signals as short as one nanosecond and variable to tens of nanoseconds can readily be obtained by this technique.

References

    1. 1)
      • A.M. Johnson , D.H. Auston . Microwave switching by picosecond photoconductivity. IEEE J. Quantum Electron. , 283 - 287
    2. 2)
      • D.H. Auston . Picosecond optoetectronic switching and gating in silicon. Appl. Phys. Lett. , 101 - 103
    3. 3)
      • DeFonzo, A.P.: `Photoconductive control of microwaves', No. 8239, NRL Formal Report, 1978.
    4. 4)
      • R. Karg , E. Kreutzer . Light-controlled semiconductor waveguide antenna. Electron. Lett. , 246 - 247
    5. 5)
      • H. Jacobs , M.M. Chrepta . Electronic phase shift for millimetre-wave semiconductor dielectric integrated circuits. IEEE Trans. , 411 - 417
    6. 6)
      • C.H. Lee . Picosecond optoelectronic switching in GaAs. Appl. Phys. Lett. , 84 - 86
    7. 7)
      • Chi H. Lee , A. Antonetti , G. Mourou . Measurements of the photoconductive lifetime of carriers in GaAs by optoelectronic gating techniques. Opt. Commun. , 158 - 161
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