http://iet.metastore.ingenta.com
1887

Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers

Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 μm. For d ≈ 1 μm, Jth/d is 5.0 kA cm−2 μm−1, whereas the lowest threshold is 1.6 kA cm−2 for d ≈ 0.2 μm. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.

References

    1. 1)
      • A.P. Bogatov , L.M. Dolginov , L.V. Druzhinina , P.G. Eliseev , B.N. Sverdlov , E.G. Shevchenko . Heterojunction lasers made of GaxIn1−xAsyP1−y and AlxGa1−xSbyAs1−y solid solutions. Kvantovaya Elektron., Moskva , 2294 - 2295
    2. 2)
      • A.P. Bogatov , L.M. Dolginov , P.G. Eliseev , M.G. Mildivskii , B.N. Sverdlov , E.G. Shevchenko . Radiative characteristics of InP-GaInPAs laser heterostructures. Fiz. & Tekh. Poluprovodn. , 1956 - 1961
    3. 3)
      • J.J. Hsieh . Room-temperature operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.1 μm. Appl. Phys. Lett. , 283 - 285
    4. 4)
      • J.J. Hsieh , J.A. Rossi , J.P. Donnelly . Room-temperature cw operation of GaInAsP/In double-heterostructure diode lasers emitting at 1.1 μm. Appl. Phys. Lett. , 709 - 711
    5. 5)
      • K. Oe , K. Sugiyama . GaInAsP-InP double heterostructure lasers prepared by a new LPE apparatus. Japan. J. Appl. Phys. , 2003 - 2004
    6. 6)
      • M.A. Pollack , R.E. Nahory , J.C. Dewinter , A.A. Ballman . Liquid phase epitaxial In1−xGaxAsyP1−y lattice-matched to 〈100〉 InP over the complete wavelength range 0.92≤λ≤1.65 μm. Appl. Phys. Lett. , 314 - 316
    7. 7)
      • M.B. Panish , I. Hayashi , R. Wolfe . (1974) Heterostructure-Junction Lasers, Applied solid state science.
    8. 8)
      • Y. Itaya , Y. Suematsu , K. Iga . Carrier lifetime measurement of GaInAsP/InP double heterostructure lasers. Japan. J. Appl. Phys. , 1057 - 1058
    9. 9)
      • H. Kressel , J.K. Butler . (1977) , Semiconductor lasers and heterojunction LEDs.
    10. 10)
      • F. Stern . Calculated spectral dependence of gain in excited GaAs. J. Appl. Phys. , 5382 - 5396
    11. 11)
      • B.O. Seraphin , H.E. Bennett , R.K. Willardson , A.C. Beer . (1967) , Semiconductors and semimetals, Vol. 3.
    12. 12)
      • R.E. Nahory , M.A. Pollack , W.D. Johnston , R.L. Barns . Bandgap vs. composition and demonstration of Vegard's law for In1−xGaxAsyP1−y lattice-matched to InP. Appl. Phys. Lett. , 659 - 661
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19780491
Loading

Related content

content/journals/10.1049/el_19780491
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address