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p-i-n diode reverse-bias switching via inductive discharging

p-i-n diode reverse-bias switching via inductive discharging

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Reverse switching of high-power p-i-n diodes can be achieved by inductive discharge. In this type of switching there is a direct interaction between the energy-storing element and the p-i-n diodes, and the current and voltage waveforms follow somewhat different equations to those of a conventional driving circuit.

References

    1. 1)
      • C.J. Georgopoulos . Analysis of forward-bias p-i-n diode inductive driving. IEEE J. Solid-State Circuits , 394 - 402
    2. 2)
      • H. Benda , E. Spenke . Reverse recovery process in silicon power rectifiers. Proc. IEEE , 1331 - 1354
    3. 3)
      • C.J. Georgopoulos . Current and voltage waveforms for reverse switching high power p-i-n diodes. IEEE J. Solid-State Circuits , 286 - 295
    4. 4)
      • S.M. Sze , W. Shockley . Unit-cube expression for space-charge resistance. Bell Syst. Tech. J. , 837 - 842
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