Electrical properties of laser-annealed donor-implanted GaAs

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Electrical properties of laser-annealed donor-implanted GaAs

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© The Institution of Electrical Engineers
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A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1–2 × 1019 cm−3 were measured for samples implanted at room temperature or 200°C with a dose of 1–5 × 1015 ions cm−2. High electrical activities were obtained both with and without Si3N4 coatings.

Inspec keywords: tellurium; selenium; annealing; semiconductor doping; III-V semiconductors; carrier density; gallium arsenide; ion implantation

Other keywords: GaAs; Rutherford backscattering; electron concentrations; laser annealed donor implanted; tellurium ions; Si3N4 coatings; Q-switched ruby laser; selenium; electrical properties

Subjects: Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); II-VI and III-V semiconductors; Doping and implantation of impurities; Electrical conductivity of II-VI and III-V semiconductors

References

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      • S.M. Sze , J.C. Irvin . Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300 K. Solid-State Electron.
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      • E. Rimini , P. Baeri , G. Foti . Laser pulse energy dependence of annealing in ion implanted Si and GaAs semiconductors. Phys. Lett.
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      • S.U. Campisano , I. Catalano , G. Foti , E. Rimini , F. Eisen , M.A. Nicolet . Laser reordering of implanted amorphous layers in GaAs. Solid-State Electron.
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      • J.A. Golovchenko , T.N.C. Venkatesan . Annealing of Te-implanted GaAs by ruby laser irradiation. Appl. Phys. Lett.
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