Electrical properties of laser-annealed donor-implanted GaAs

Electrical properties of laser-annealed donor-implanted GaAs

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A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1–2 × 1019 cm−3 were measured for samples implanted at room temperature or 200°C with a dose of 1–5 × 1015 ions cm−2. High electrical activities were obtained both with and without Si3N4 coatings.


    1. 1)
      • J.A. Golovchenko , T.N.C. Venkatesan . Annealing of Te-implanted GaAs by ruby laser irradiation. Appl. Phys. Lett.
    2. 2)
      • E. Rimini , P. Baeri , G. Foti . Laser pulse energy dependence of annealing in ion implanted Si and GaAs semiconductors. Phys. Lett.
    3. 3)
      • S.U. Campisano , I. Catalano , G. Foti , E. Rimini , F. Eisen , M.A. Nicolet . Laser reordering of implanted amorphous layers in GaAs. Solid-State Electron.
    4. 4)
      • S.S. Kular , B.J. Sealy , K.G. Stephens , D.R. Chick , Q.V. Davis , J. Edwards . Pulsed laser annealing of zinc-implanted GaAs. Electron. Lett. , 85 - 87
    5. 5)
      • S.M. Sze , J.C. Irvin . Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300 K. Solid-State Electron.

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