http://iet.metastore.ingenta.com
1887

Electrical properties of laser-annealed donor-implanted GaAs

Electrical properties of laser-annealed donor-implanted GaAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1–2 × 1019 cm−3 were measured for samples implanted at room temperature or 200°C with a dose of 1–5 × 1015 ions cm−2. High electrical activities were obtained both with and without Si3N4 coatings.

References

    1. 1)
      • J.A. Golovchenko , T.N.C. Venkatesan . Annealing of Te-implanted GaAs by ruby laser irradiation. Appl. Phys. Lett.
    2. 2)
      • E. Rimini , P. Baeri , G. Foti . Laser pulse energy dependence of annealing in ion implanted Si and GaAs semiconductors. Phys. Lett.
    3. 3)
      • S.U. Campisano , I. Catalano , G. Foti , E. Rimini , F. Eisen , M.A. Nicolet . Laser reordering of implanted amorphous layers in GaAs. Solid-State Electron.
    4. 4)
      • S.S. Kular , B.J. Sealy , K.G. Stephens , D.R. Chick , Q.V. Davis , J. Edwards . Pulsed laser annealing of zinc-implanted GaAs. Electron. Lett. , 85 - 87
    5. 5)
      • S.M. Sze , J.C. Irvin . Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300 K. Solid-State Electron.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19780484
Loading

Related content

content/journals/10.1049/el_19780484
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address