For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.
Inspec keywords: infrared spectra of inorganic solids; amorphous semiconductors; amorphisation; ion implantation; gallium arsenide; III-V semiconductors; impurity and defect absorption spectra of inorganic solids
Other keywords:
Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Amorphous and glassy semiconductors; Semiconductor doping; Infrared and Raman spectra in inorganic crystals; Ion beam effects; Impurity and defect absorption in semiconductors