Amorphous-layer formation in GaAs by ion implantation
Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.