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Amorphous-layer formation in GaAs by ion implantation

Amorphous-layer formation in GaAs by ion implantation

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© The Institution of Electrical Engineers
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Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.

Inspec keywords: infrared spectra of inorganic solids; amorphous semiconductors; amorphisation; ion implantation; gallium arsenide; III-V semiconductors; impurity and defect absorption spectra of inorganic solids

Other keywords: amorphous layer formation; III-V semiconductors; ion implantation; GaAs; optical absorption; IR spectra

Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Amorphous and glassy semiconductors; Semiconductor doping; Infrared and Raman spectra in inorganic crystals; Ion beam effects; Impurity and defect absorption in semiconductors

References

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