n-channel inversion-mode InP m.i.s.f.e.t.
n-channel inversion-mode InP m.i.s.f.e.t.
- Author(s): D.L. Lile ; D.A. Collins ; L.G. Meiners ; L. Messick
- DOI: 10.1049/el:19780441
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- Author(s): D.L. Lile 1 ; D.A. Collins 1 ; L.G. Meiners 1 ; L. Messick 1
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View affiliations
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Affiliations:
1: Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego, USA
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Affiliations:
1: Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego, USA
- Source:
Volume 14, Issue 20,
28 September 1978,
p.
657 – 659
DOI: 10.1049/el:19780441 , Print ISSN 0013-5194, Online ISSN 1350-911X
Capacitance/voltage and m.i.s.f.e.t. inversion-mode f.e.t. data are reported for p-type InP. It is shown that the surface of this material appears to be inverted at zero gate bias and that good inversion-mode (normally-off) device behaviour is possible.
Inspec keywords: insulated gate field effect transistors; III-V semiconductors
Other keywords:
Subjects: Insulated gate field effect transistors
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