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Enhancement-mode ion-implanted InP f.e.t.s

Enhancement-mode ion-implanted InP f.e.t.s

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Planar enhancement-mode InP f.e.t.s have been fabricated through the use of ion implantation and subsequent electron-beam lithography. Noise figures of 3.2 and 2.6 dB were achieved at 8 GHz with associated gains of 6.4 and 4.7 dB, respectively.

References

    1. 1)
      • K.O. Hill , Y. Fujii , D.C. Johnson , B.S. Kawasaki . Appl. Phys. Lett.. Appl. Phys. Lett.
    2. 2)
      • Henry, R.L., Swiggard, E.M.: Institute of Physics conference on gallium arsenide and related compounds, St. Louis.
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