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Deep traps in polysilicon solar cells

Deep traps in polysilicon solar cells

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Anomalously high values of the ideality parameter n have been found in n+−p diffused polysilicon solar cells indicating large generation-recombination rates in the space-charge layers. Two electron traps situated at 0.46 ± 0.03 eV and 0.12 ± 0.02 eV below the conduction-band edge seem to be responsible for these large generation-recombination currents. Because the concentration profiles of both levels are very similar, both can be attributed to the same defect.

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