Izumi, K.; Doken, M.; Ariyoshi, H.: 'C.M.O.S. devices fabricated on buried SiO<sup>2</sup> layers formed by oxygen implantation into silicon', Electronics Letters, 1978, 14, (18), p. 593-594, DOI: 10.1049/el:19780397
IET Digital Library, https://digital-library.theiet.org/;jsessionid=55glt75q39ppa.x-iet-live-01content/journals/10.1049/el_19780397