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C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

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Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.

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