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Analysis of intermodulation distortion in GaAs m.e.s.f.e.t. amplifiers

Analysis of intermodulation distortion in GaAs m.e.s.f.e.t. amplifiers

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Intermodulation distortion generated in a m.e.s.f.e.t. amplifier is analysed using a Volterra series representation. The transistor model used enables direct analytical determination of the nonlinear elements from small signal measurements. Experimental verification comparing predicted and measured second-and third-order intermodulation products in the amplifer is presented.

References

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      • K. Agarwal , Y.L. Kuo . Third-order intermodulation distortion in microwave amplifier. Electron. Lett. , 282 - 283
    2. 2)
      • R. Tucker , C. Rauscher . Modelling the 3 rd-order intermodulation-distortion properties of a GaAs f.e.t.. Electron. Lett. , 508 - 510
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      • R. Pucel . Profile design for distortion reduction in microwave field-effect transistors. Electron. Lett. , 204 - 206
    4. 4)
      • R. Minasian . Large signal GaAs m.e.s.f.e.t. model and distortion analysis. Electron. Lett. , 183 - 185
    5. 5)
      • J. Bussgang , L. Ehrman , J. Graham . Analysis of nonlinear systems with multiple inputs. Proc. IEEE , 1088 - 1119
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