Design of a temperature stable surface-acoustic-wave device on silicon

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Design of a temperature stable surface-acoustic-wave device on silicon

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© The Institution of Electrical Engineers
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We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to −4.5×10−8/(°C)2 and it is close to that of the quartz ST-X.

Inspec keywords: surface acoustic wave devices; oscillators; silicon compounds; ultrasonic delay lines; silicon

Other keywords: phase velocity; delay line; surface acoustic wave device; integrated oscillators; phase delay temperature coefficients; Rayleigh mode propagation; Si-SiO2 structure

Subjects: Oscillators; Acoustic wave devices; Acoustic signal processing; Ultrasonics, quantum acoustics, and physical effects of sound; Acoustical measurements and instrumentation

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      • Parker, T.E., Schulz, M.B.: `Temperature stable surface acoustic wave delay lines with SiO', CHO 896-154, Ultrasonics Symposium Proceeding, p. 295–298.
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