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GaAs Hall-effect devices fabricated by ion-implantation technique

GaAs Hall-effect devices fabricated by ion-implantation technique

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Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.

References

    1. 1)
      • T. Inada , H. Miwa , T. Hara , M. Mihara . Annealing of Se implanted GaAs with an oxygen free CVD Si3N4 encapsulant. J. Appl. Phys.
    2. 2)
      • A. Thanailakis , E. Cohen . Epitaxial gallium arsenide as Hall elements. Solid-State Electron. , 997 - 1000
    3. 3)
      • T. Inada , Y. Kanda , T. Hara . GaAs Hall elements fabricated from ion implanted layers. Solid-State Electron.
    4. 4)
      • Hojo, A., Tanaka, S., Kuru, I.: `Epitaxial GaAs Hall generators for high temperature applications', Proceedings of the 7th conference on solid-state devices, 1975, , p. 261–266.
    5. 5)
      • T. Inada , T. Ohkubo , S. Sawada , T. Hara , M. Mihara , M. Nakajima . Chemical vapor deposition of silicon nitride: encapsulant layers for annealing gallium arsenide. J. Electrochem. Soc.
    6. 6)
      • H. Müller , F.H. Eisen , J.W. Mayer . Anodic oxidation of GaAs as a technique to evaluate electrical carrier concentration profiles. J. Electrochem. Soc. , 651 - 655
    7. 7)
      • S.M. Sze , J.C. Irvin . Resistivity mobility and impurity levels in GaAs, Ge, and Si at 300K. Solid-State Electron. , 539 - 602
    8. 8)
      • N. Toyoda , I. Niikura , Y. Shimura , T. Hozuki , H. Sugibuchi , M. Mimara , T. Hara . Ion-implanted GaAs varactor diodes: capacitance uniformity. Electron. Lett. , 152 - 154
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