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Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.
Inspec keywords: III-V semiconductors; gallium arsenide; Hall effect devices; ion implantation
Other keywords:
Subjects: Sensing devices and transducers; General fabrication techniques; Bulk effect devices; II-VI and III-V semiconductors; Instrumentation; Semiconductor doping