© The Institution of Electrical Engineers
Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.
References
-
-
1)
-
T. Inada ,
H. Miwa ,
T. Hara ,
M. Mihara
.
Annealing of Se implanted GaAs with an oxygen free CVD Si3N4 encapsulant.
J. Appl. Phys.
-
2)
-
A. Thanailakis ,
E. Cohen
.
Epitaxial gallium arsenide as Hall elements.
Solid-State Electron.
,
997 -
1000
-
3)
-
T. Inada ,
Y. Kanda ,
T. Hara
.
GaAs Hall elements fabricated from ion implanted layers.
Solid-State Electron.
-
4)
-
Hojo, A., Tanaka, S., Kuru, I.: `Epitaxial GaAs Hall generators for high temperature applications', Proceedings of the 7th conference on solid-state devices, 1975, , p. 261–266.
-
5)
-
T. Inada ,
T. Ohkubo ,
S. Sawada ,
T. Hara ,
M. Mihara ,
M. Nakajima
.
Chemical vapor deposition of silicon nitride: encapsulant layers for annealing gallium arsenide.
J. Electrochem. Soc.
-
6)
-
H. Müller ,
F.H. Eisen ,
J.W. Mayer
.
Anodic oxidation of GaAs as a technique to evaluate electrical carrier concentration profiles.
J. Electrochem. Soc.
,
651 -
655
-
7)
-
S.M. Sze ,
J.C. Irvin
.
Resistivity mobility and impurity levels in GaAs, Ge, and Si at 300K.
Solid-State Electron.
,
539 -
602
-
8)
-
N. Toyoda ,
I. Niikura ,
Y. Shimura ,
T. Hozuki ,
H. Sugibuchi ,
M. Mimara ,
T. Hara
.
Ion-implanted GaAs varactor diodes: capacitance uniformity.
Electron. Lett.
,
152 -
154
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19780338
Related content
content/journals/10.1049/el_19780338
pub_keyword,iet_inspecKeyword,pub_concept
6
6