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New contact resistance profiling method for the assessment of III–V alloy multilayer structures

New contact resistance profiling method for the assessment of III–V alloy multilayer structures

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© The Institution of Electrical Engineers
Published

A practical technique for the assessment of multilayer III–V structures is described which is based on the measurement of the contact resistance between a tungsten carbide probe and an angle lapped sample surface. The technique has been applied to homostructure and double heterostructure layers of GaAs, GaAlAs, InP and GaInAsP and quantitative information on the doping profiles has been obtained by calibration against binary material samples of known impurity levels.

Inspec keywords: p-n homojunctions; p-n heterojunctions; contact resistance; III-V semiconductors; doping profiles

Other keywords: contact resistance profiling method; homostructure layers; GaAs; doping profiles; double heterostructure layers; III-V alloy multilayer structures; GaAlAs; InP; GaInAsP

Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Contact resistance, contact potential, and work functions; II-VI and III-V semiconductors; Impurity concentration, distribution, and gradients; Semiconductor doping; Semiconductor junctions

References

    1. 1)
      • R. Hilibrand , D.R. Gold . Determination of the impurity distribution in junction diodes from capacitance-voltage measure-ments. RCA Rev.
    2. 2)
      • Ambridge, T., Faktor, M.M.: `An electrochemical technique for automatic depth profiles of carrier concentration', Iop conf. ser., 1975, 24, p. 320.
    3. 3)
      • R.G. Mazur , D.H. Dickey . A spreading resistance technique for resistivity measurements on silicon. J. Electrochem. Soc.
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