© The Institution of Electrical Engineers
Carrier removal profiles have been measured in annealed, oxygen implanted, n-type GaAs samples. The implants were performed at room temperature with an ion energy of 400 keV. A dose of 1015 O+/cm2 produced a resistivity of about 108 Ω/□ over a layer 0.6 μm thick, but no significant electrical compensation was observed from doses less than 1013 O+/cm2. However, doses of 1011 to 5×1012 O+/cm2 produced resistivities of 108 to 109 Ω/□ without subsequent annealing.
References
-
-
1)
-
J.M. Blum ,
J.C. McGroddy ,
P.G. McMullin ,
K.K. Shih ,
A.W. Smith ,
J.F. Ziegler
.
Oxygen implanted double heterjunction GaAs/GaAlAs injection lasers.
IEEE J. Quantum Electron.
,
413 -
418
-
2)
-
P.N. Favennec ,
E.V.K. Rao ,
S. Namba
.
(1975)
Compensating layers in GaAs by ion implantation: application to integrated optics, Ion implantation in semiconductors.
-
3)
-
Y. Kato ,
T. Shimada ,
Y. Shiraki ,
K.F. Komatsubara
.
Electrical conductivity of disordered layers in GaAs crystals produced by ion Implantation.
J. Appl. Phys.
,
1044 -
1049
-
4)
-
S.M. Sze ,
J.C. Irvin
.
Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300°K.
Solid-state Electron.
,
599 -
602
-
5)
-
T. Itoh ,
T. Tsuchiya ,
M. Takeuchi
.
Carrier compensation of n-GaAs by oxygen ion implantation.
Jap. J. Appl. Phys.
,
2277 -
2278
-
6)
-
B.J. Sealy ,
R.K. Surridge
.
A new thin film encapsulant for ion implanted GaAs.
Thin Solid Films
,
L19 -
L22
-
7)
-
P.N. Favennec
.
Semi-insulating layers of GaAs by oxygen implantation.
J. Appl. Phys.
,
2532 -
2536
-
8)
-
L.J. van der Pauw
.
A method of measuring specific resistivity and Hall effect of discs of arbitrary shape.
Philips Res. Rep.
,
1 -
9
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19780208
Related content
content/journals/10.1049/el_19780208
pub_keyword,iet_inspecKeyword,pub_concept
6
6