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Carrier removal profiles from oxygen implanted GaAs

Carrier removal profiles from oxygen implanted GaAs

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Carrier removal profiles have been measured in annealed, oxygen implanted, n-type GaAs samples. The implants were performed at room temperature with an ion energy of 400 keV. A dose of 1015 O+/cm2 produced a resistivity of about 108 Ω/□ over a layer 0.6 μm thick, but no significant electrical compensation was observed from doses less than 1013 O+/cm2. However, doses of 1011 to 5×1012 O+/cm2 produced resistivities of 108 to 109 Ω/□ without subsequent annealing.

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