@ARTICLE{ iet:/content/journals/10.1049/el_19780168, author = {T. Sakai}, author = {T. Suzuki}, author = {H. Hasegawa}, keywords = {anodic oxides;low temperature Zn diffusion;junction depth data;GaP;GaAs;}, ISSN = {0013-5194}, language = {English}, abstract = {A new low-temperature selective zinc-diffusion process into GaAs and GaP, is described. It involves a room temperature anodic oxidation for growth of oxide films containing zinc, and a subsequent heating for diffusion, using the oxide as the diffusion source. Process details and junction depth data are presented.}, title = {A new method of low-temperature zinc diffusion into GaAs and GaP using anodic oxides}, journal = {Electronics Letters}, issue = {8}, volume = {14}, year = {1978}, month = {April}, pages = {248-249(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=14hgo4mjtk318.x-iet-live-01content/journals/10.1049/el_19780168} }