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A new method of low-temperature zinc diffusion into GaAs and GaP using anodic oxides

A new method of low-temperature zinc diffusion into GaAs and GaP using anodic oxides

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A new low-temperature selective zinc-diffusion process into GaAs and GaP, is described. It involves a room temperature anodic oxidation for growth of oxide films containing zinc, and a subsequent heating for diffusion, using the oxide as the diffusion source. Process details and junction depth data are presented.


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