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Modification of zinc diffusion profiles in GaAs by proton irradiation

Modification of zinc diffusion profiles in GaAs by proton irradiation

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© The Institution of Electrical Engineers
Published

A technique is described which gives control over the dopant distribution for zinc diffusion in GaAs. Experimental profiles are presented which show that both dopant depth and concentration can be increased by prior H+-irradiation. The zinc atom concentration profiles are shown to correspond with the carrier (hole) profiles.

Inspec keywords: gallium arsenide; diffusion in solids; III-V semiconductors; proton effects; doping profiles

Other keywords: proton irradiation; GaAs; dopant distribution; Zn diffusion profiles

Subjects: Doping and implantation of impurities; Semiconductor doping; II-VI and III-V semiconductors; Impurity concentration, distribution, and gradients

References

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      • H. Becke , D. Flatley , D. Stolnitz . Double diffused gallium arsenide transistors. Solid-state Electron. , 255 - 265
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      • S.M. Sze , J.C. Irvin . Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300° K. Solid-State Electron. , 599 - 602
    3. 3)
      • S.S. Kular , B.J. Sealy , K.G. Stephens . Electrical profiles from zinc ion implanted GaAs. Electron. Lett. , 2 - 4
    4. 4)
      • E. Garmire , D.F. Lovelace , G.B.H. Thompson . Zinc-diffused two dimensional optical waveguides in n-type GaAs. Appl. Opt. , 1394 - 1397
    5. 5)
      • M.A. Littlejohn , J.R. Hauser , L.K. Monteith . The electrical properties of 60 keV zinc ions implanted into semi-insulating GaAs. Radiat. Eff. , 185 - 190
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