Ion implanted GaAs varactor diodes: capacitance uniformity

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Ion implanted GaAs varactor diodes: capacitance uniformity

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© The Institution of Electrical Engineers
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Gallium arsenide varactor diodes with low series resistance (∼0.25 Ω) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.

Inspec keywords: liquid phase epitaxial growth; capacitance; ion implantation; semiconductor device manufacture; varactors

Other keywords: capacitance uniformity; l.p.e. techniques; ion implantation; standard deviation; varactor tuners; r.f. tracking; diode capacitance; GaAs varactor diodes

Subjects: Semiconductor doping; Semiconductor industry; Junction and barrier diodes

References

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      • Higgins, J.A., Eisen, F., Welch, B., Robinson, G., Hill, W.: `GaAs FETs fabricated by selenium ion implantation', Proceedings of the conference on GaAs and related compounds, 1976, St. Louis, p. 236–244.
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      • T. Hara , I. Niikura , T. Hozuki , N. Toyada , M. Mihara . GaAs varactor tuners for UHF TV. IEEE Trans. , 433 - 439
    3. 3)
      • N. Toyoda , M. Mihara , T. Hara . Liquid phase epitaxial growth of thin GaAs layers from supercooled solutions. J. Appl. Phys. , 443 - 448
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      • I. Niikura , T. Hara . GaAs varactor diode for u.h.f. t.v. tuners. Electron. Lett. , 391 - 392
    5. 5)
      • I. Niikura , N. Toyoda , Y. Shimura , M. Mihara , T. Hara . GaAs varactor diodes for u.h.f. t.v. tuners. Electron. Lett. , 9 - 10
    6. 6)
      • T. Hara , I. Niikura , N. Toyoda , M. Mihara . High Q GaAs varactor diodes. IEEE Trans. Electron Devices
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