For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
Gallium arsenide varactor diodes with low series resistance (∼0.25 Ω) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.
Inspec keywords: liquid phase epitaxial growth; capacitance; ion implantation; semiconductor device manufacture; varactors
Other keywords:
Subjects: Semiconductor doping; Semiconductor industry; Junction and barrier diodes