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Ion implanted GaAs varactor diodes: capacitance uniformity

Ion implanted GaAs varactor diodes: capacitance uniformity

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Gallium arsenide varactor diodes with low series resistance (∼0.25 Ω) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.

References

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      • T. Hara , I. Niikura , T. Hozuki , N. Toyada , M. Mihara . GaAs varactor tuners for UHF TV. IEEE Trans. , 433 - 439
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      • N. Toyoda , M. Mihara , T. Hara . Liquid phase epitaxial growth of thin GaAs layers from supercooled solutions. J. Appl. Phys. , 443 - 448
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      • I. Niikura , T. Hara . GaAs varactor diode for u.h.f. t.v. tuners. Electron. Lett. , 391 - 392
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      • I. Niikura , N. Toyoda , Y. Shimura , M. Mihara , T. Hara . GaAs varactor diodes for u.h.f. t.v. tuners. Electron. Lett. , 9 - 10
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      • T. Hara , I. Niikura , N. Toyoda , M. Mihara . High Q GaAs varactor diodes. IEEE Trans. Electron Devices
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