Ion implanted GaAs varactor diodes: capacitance uniformity
Gallium arsenide varactor diodes with low series resistance (∼0.25 Ω) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.