A simple formula is given for the extent of boron depletion from the surface channel region of a d.m.o.s. f.e.t. during fabrication.
Inspec keywords: insulated gate field effect transistors; doping profiles; semiconductor technology
Other keywords:
Subjects: Semiconductor doping; Insulated gate field effect transistors
References
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1)
- Strudwick, M.N.: `Oxidation of silicon and non-equilibrium segregation of boron during redistribution', 1977, M.Eng.Sci. Thesis, University of New South Wales.
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- M.D. Pocha , A.G. Gonzalez , R.W. Dutton . Threshold voltage controllability in double-diffused MOS transistors. IEEE Trans. , 778 - 784
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- R.P. Ricco , J.I. Goldstein , J.C. McCallum . The diffusion of implanted boron in silicon. J. Electrochem. Soc. , 276 - 279
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- J.S.T. Huang , L.C. Welliver . On the redistribution of boron in the diffused layer during thermal oxidation. J. Electrochem. Soc. , 1577 - 1580
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- Strudwick, M.N., Ladbrooke, P.H.: `Non-equilibrium segregation of boron during redistribution', 16th international radio and electronics engineering convention digest, 1977, Melbourne, p. 8.
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- A.S. Grove , O. Leistiko , C.T. Sah . Redistribution of acceptor and donor impurities during thermal oxidation of silicon. J. Appl. Phys. , 2695 - 2701
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19780087
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content/journals/10.1049/el_19780087
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