Boron segregation data for d.m.o.s. devices
Boron segregation data for d.m.o.s. devices
- Author(s): P.H. Ladbrooke and M.N. Strudwick
- DOI: 10.1049/el:19780087
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- Author(s): P.H. Ladbrooke 1 and M.N. Strudwick 1
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View affiliations
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Affiliations:
1: Department of Solid-State Electronics, University of New South Wales, Kensington, Australia
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Affiliations:
1: Department of Solid-State Electronics, University of New South Wales, Kensington, Australia
- Source:
Volume 14, Issue 5,
2 March 1978,
p.
128 – 129
DOI: 10.1049/el:19780087 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
A simple formula is given for the extent of boron depletion from the surface channel region of a d.m.o.s. f.e.t. during fabrication.
Inspec keywords: insulated gate field effect transistors; doping profiles; semiconductor technology
Other keywords:
Subjects: Semiconductor doping; Insulated gate field effect transistors
References
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1)
- Strudwick, M.N.: `Oxidation of silicon and non-equilibrium segregation of boron during redistribution', 1977, M.Eng.Sci. Thesis, University of New South Wales.
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2)
- M.D. Pocha , A.G. Gonzalez , R.W. Dutton . Threshold voltage controllability in double-diffused MOS transistors. IEEE Trans. , 778 - 784
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3)
- R.P. Ricco , J.I. Goldstein , J.C. McCallum . The diffusion of implanted boron in silicon. J. Electrochem. Soc. , 276 - 279
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4)
- J.S.T. Huang , L.C. Welliver . On the redistribution of boron in the diffused layer during thermal oxidation. J. Electrochem. Soc. , 1577 - 1580
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5)
- Strudwick, M.N., Ladbrooke, P.H.: `Non-equilibrium segregation of boron during redistribution', 16th international radio and electronics engineering convention digest, 1977, Melbourne, p. 8.
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6)
- A.S. Grove , O. Leistiko , C.T. Sah . Redistribution of acceptor and donor impurities during thermal oxidation of silicon. J. Appl. Phys. , 2695 - 2701
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