Low leakage nearly ideal Schottky barriers to n-InP

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Low leakage nearly ideal Schottky barriers to n-InP

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© The Institution of Electrical Engineers
Published

Au Schottky barriers incorporating an interfacial native oxide have been formed on n type InP. Depending on oxide thickness and annealing conditions these devices exhibit high barrier heights, ϕB > 0.75 eV, ideality factors n as low as 1.04 and very low saturation current densities <∼ 10−7 Acm−2.

Inspec keywords: indium compounds; Schottky effect; III-V semiconductors

Other keywords: n-InP Schottky barriers; annealing conditions; interfacial native oxide; n type InP; high barrier heights; Schottky barriers; oxide thickness

Subjects: Semiconductor-metal interfaces; Electrical properties of metal-nonmetal contacts

References

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      • M.J. Cardwell , R.F. Peart . Measurement of carrier concentration profiles in epitaxial indium phosphide. Electron. Lett. , 88 - 89
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      • Kim, H.B., Lovas, A.F., Sweeney, G.G., Heng, T.M.S.: `Effects of heat treatment on metal-InP Schottky barriers characterized by secondary ion mass spectrometry', Proceedings of the sixth international symposium on GaAs and related compounds, September 1976, St. Louis, p. 145–153, (IoP Conf. Series, 33b, London 1977).
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      • G.G. Roberts , K.P. Pande . Electrical characteristics of Au/Ti (n-type) InP Schottky diodes. J. Phys. D. , 1323 - 1328
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