Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5–2.5 J/cm2 produced electrical activity of 40–50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm−3 were measured. Uncoated samples irradiated with similar laser energies were not electrically active.
Inspec keywords: annealing; III-V semiconductors; laser beam applications; ion implantation; carrier mobility; semiconductor technology; carrier density; gallium arsenide; zinc
Other keywords:
Subjects: Semiconductor technology; Laser applications; Electrical conductivity of II-VI and III-V semiconductors; Cold working, work hardening; post-deformation annealing, recovery and recrystallisation; textures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical and magnetic properties (related to treatment conditions); II-VI and III-V semiconductors; Doping and implantation of impurities
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