Microwave device quality GaAs, grown by the electric current-controlled liquid-phase epitaxy method, is reported. Ratios of peak current to valley current near the theoretical limit for the corresponding layer doping and thickness are reported, along with high breakdown voltages in unloaded l.s.a. oscillators.
Inspec keywords: microwave oscillators; Gunn diodes; liquid phase epitaxial growth; doping profiles; limited space charge accumulation; gallium arsenide; semiconductor growth
Other keywords:
Subjects: Bulk effect devices; Epitaxial growth; Thin film growth, structure, and epitaxy; Crystal growth from melt; Oscillators; Deposition from liquid phases (melts and solutions); Semiconductor doping; Doping and implantation of impurities; Solid-state microwave circuits and devices
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