Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes
Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes
- Author(s): D.J. Lawrence and L.F. Eastman
- DOI: 10.1049/el:19780052
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- Author(s): D.J. Lawrence 1 and L.F. Eastman 1
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View affiliations
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Affiliations:
1: School of Electrical Engineering, Cornell University, Ithaca, USA
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Affiliations:
1: School of Electrical Engineering, Cornell University, Ithaca, USA
- Source:
Volume 14, Issue 4,
16 February 1978,
p.
77 – 78
DOI: 10.1049/el:19780052 , Print ISSN 0013-5194, Online ISSN 1350-911X
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Microwave device quality GaAs, grown by the electric current-controlled liquid-phase epitaxy method, is reported. Ratios of peak current to valley current near the theoretical limit for the corresponding layer doping and thickness are reported, along with high breakdown voltages in unloaded l.s.a. oscillators.
Inspec keywords: microwave oscillators; Gunn diodes; liquid phase epitaxial growth; doping profiles; limited space charge accumulation; gallium arsenide; semiconductor growth
Other keywords:
Subjects: Bulk effect devices; Epitaxial growth; Thin film growth, structure, and epitaxy; Crystal growth from melt; Oscillators; Deposition from liquid phases (melts and solutions); Semiconductor doping; Doping and implantation of impurities; Solid-state microwave circuits and devices
References
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- Daniele, J.J., Michel, C.: `Peltier-induced growth of GaAlAs', Proceedings of the 1974 symposium on GaAs and related compounds.
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- M. Kumagawa , A.F. Witt , M. Lichtensteiger , H.C. Gatos . Current-controlled growth and dopant modulation in liquid phase epitaxy. J. Electrochem. Soc.
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- D.J. Lawrence , L.F. Eastman . Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy. J. Cryst. Growth
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- S. Christensen , D. Woodard , L.F. Eastman . High peak power LSA operation from epitaxial GaAs. IEEE Trans.
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- K.T. Ip , L.F. Eastman . Dependence of TEO, Efficiency on N × L product. Electron. Lett.
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- Camp, W.O., Eastman, L.F.: `The limits and doping concentration to frequency ratio as a function of temperature and doping profile in T.E.O.', Proceedings of the 5th Cornell biennial conference on microwave semiconductor devices, August 1975, Ithaca, NY, p. 205.
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- D.J. Lawrence , L.F. Eastman . Electric current controlled liquid phase epitaxy of GaAs on N+ and semi-insulating substrates. J. Electron. Mater.
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- K. Kamei , L.F. Eastman . High efficiency CW transferred-electron oscillator with optimized doping profile. IEEE Trans.
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- S.I. Long , J.M. Ballantyne , L.F. Eastman . Steady-state liquid phase epitaxial growth of GaAs. J. Cryst. Growth
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- J.J. Daniele . CW GaAs/GaAlAs DH lasers grown by Peltier-induced LPE. J. Appl. Phys.
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