Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.

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Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.

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In microwave field-effect transistors there is a progressive phase delay as a signal propagates along the gate, with a corresponding delay in channel modulation across the width of the transistor. It is shown that this leads to a phase lag in gm while the modulus of gm is comparatively unaffected.

Inspec keywords: semiconductor device models; Schottky gate field effect transistors; solid-state microwave devices

Other keywords: wave propagation; phase lag; microwave field effect transistor; gate; phase delay; channel modulation; MESFET

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices; Solid-state microwave circuits and devices

References

    1. 1)
      • R.H. Dawson . Equivalent circuit of the Schottky-barrier field-effect transistor at microwave frequencies. IEEE Trans. , 499 - 501
    2. 2)
      • W. Baechtold , P. Wolf . An improved microwave silicon MESEFT. Solid-State Electron. , 783 - 790
    3. 3)
      • P. Wolf . Microwave properties of Schottky-barrier field-effect transistors. IBM J. Res. & Dev. , 125 - 141
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