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GaAs m.a.o.s.f.e.t. memory transistor

GaAs m.a.o.s.f.e.t. memory transistor

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A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.

References

    1. 1)
      • B. Bayraktaroglu , S.J. Hannah , H.L. Hartnagel . Control of Al2O3 position in anodic GaAs native oxide. Electron. Lett.
    2. 2)
      • B. Bayraktaroglu , S.J. Hannah , H.L. Hartnagel . Control of Al2O3, position in anodic GaAs native oxide. J. Electrochem. Soc.
    3. 3)
      • H. Hasegawa , H.L. Hartnagel . Anodic oxidation of GaAs in mixed solutions of glycol and water. J. Electrochem. Soc.
    4. 4)
      • A. Colquhoun , E. Kohn , H.L. Hartnagel . Improved enhancement depletion GaAs MOSFET using anodic oxides as the gate insulator. IEEE Trans.
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