Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s

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Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s

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© The Institution of Electrical Engineers
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A technique for characterising the 3rd-order intermodulationdistortion properties of GaAs f.e.t.s as a function of the load admittance presented to the output of the device is described. These properties can be determined for virtually any load admittance, including a purely reactive termination. A practical f.e.t example is included for illustration.

Inspec keywords: field effect transistors; intermodulation measurement; electric distortion measurement

Other keywords: third order intermodulation distortion measurement; GaAs FET; reactive termination; load admittance

Subjects: Other electric variables measurement; Other field effect devices

References

    1. 1)
      • Sechi, F.N., Huang, H.C., Riginos, V.: `High-efficiency MESFET linear amplifier operating at 4 GHz', Digest of Technical Papers, 1977 IEEE International Solid-State Circuits Conference, February 1977, p. 164–165.
    2. 2)
      • R. Tucker , C. Rauscher . Modelling the 3 rd-order intermodulation-distortion properties of a GaAs f.e.t.. Electron. Lett. , 508 - 510
    3. 3)
      • Takayama, Y.: `A new load-pull characterization method for microwave power transistors', Proceedings of 1976 IEEE International Microwave Symposium, June 1976, p. 218–220.
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