Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s

Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s

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A technique for characterising the 3rd-order intermodulationdistortion properties of GaAs f.e.t.s as a function of the load admittance presented to the output of the device is described. These properties can be determined for virtually any load admittance, including a purely reactive termination. A practical f.e.t example is included for illustration.


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    3. 3)
      • Takayama, Y.: `A new load-pull characterization method for microwave power transistors', Proceedings of 1976 IEEE International Microwave Symposium, June 1976, p. 218–220.

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