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GaAs Schottky-barrier-diode frequency multipliers in 300 and 450 GHz bands

GaAs Schottky-barrier-diode frequency multipliers in 300 and 450 GHz bands

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A 450 GHz-band tripler delivering an output power of –11.2 dBm has been developed. A high-efficiency 300 GHz doubler whose conversion loss is 10.7 dB has also been developed. These efficient multiplications have been obtained by the use of GaAs Schottky-barrier diodes and thin-film integrated-circuit techniques.

References

    1. 1)
      • T. Ishibashi , M. Ino , T. Makimura , M. Ohmori . Liquid-nitrogen-cooled submillimetre-wave silicon impatt diodes. Electron. Lett. , 299 - 300
    2. 2)
      • Gerard T. Wrixon . Low noise diodes and mixers for the 1–2 mm wavelength region. IEEE Trans. , 1159 - 1165
    3. 3)
      • A.R. Kerr , R.J. Mattauch , J.A. Grange . A new mixer design for 140–220 GHz. IEEE Trans. , 399 - 401
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