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Effect of thermal impedance on chirp characteristics of high-efficiency pulsed InP oscillators

Effect of thermal impedance on chirp characteristics of high-efficiency pulsed InP oscillators

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Measurements have been made of the chirp characteristics of high-efficiency pulsed InP oscillators at 17 GHz for a variety of device constructions. The magnitude of the chirp follows reasonably closely the transient changes in active-layer temperature with the same sign as the inherent device dF/dT. Using an integral heatsink construction, chirp levels of less than 15 MHz/μs have been achieved at 17 GHz with peak powers of 9 W and 14.5% efficiency.

References

    1. 1)
      • E.D. Bullimore , B.J. Downing , F.A. Myers . Frequency-stable pulsed gunn oscillators. Electron. Lett. , 220 - 221
    2. 2)
      • K.W. Gray , J.E. Pattison , H.D. Rees , B.A. Prew , R.C. Clarke , L.D. Irving . InP microwave oscillators with 2-zone cathodes. Electron. Lett. , 402 - 403
    3. 3)
      • Brookbanks, D.M., Griffith, I., White, P.M.: `Integral heat sink contacts for CW indium phosphide transferred electronic oscillators and amplifiers', Institute of physics conference series 22, IoP London, p. 116–122.
    4. 4)
      • B.S. Perlman . Pulsed heat conduction in a layered Semiconductor-metal transferred-electron oscillator geometry. RCA Rev. , 637 - 667
    5. 5)
      • G. Gibbons . Transient temperature response of an avalanche diode. Solid-State Electron. , 799 - 806
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