Femtojoule logic circuit using normally-off GaAs m.e.s.f.e.t.s

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Femtojoule logic circuit using normally-off GaAs m.e.s.f.e.t.s

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© The Institution of Electrical Engineers
Published

Experimental results are reported on the speed/power performance of normally-off-type GaAs-m.e.s.f.e.t. logic circuits, using an integrated 15-stage ring oscillator as a test circuit. A power consumption as low as 1-5 μW, corresponding to a power-delay product of 1.6 fJ, was obtained. Conversely, a propagation delay time of 650 ps was measured for a power consumption of 20 μW per gate.

Inspec keywords: integrated logic circuits; Schottky gate field effect transistors

Other keywords: speed power performance; normally off GaAs MESFET; 15 stage ring oscillator; femtojoule logic circuit

Subjects: Logic and switching circuits; Logic circuits; Other field effect integrated circuits

References

    1. 1)
      • R. Van Tuyl , C. Liechti , R. Lee , E. Gowen . 4-GHz frequency division with GaAs MESFET ICs. ISSCC Digest of Technical Papers , 198 - 199, 252
    2. 2)
      • G. Nuzillat , C. Arnodo , J.P. Puron . A subnanosecond integrated switching circuit with MESFET's for LSI. IEEE J. Solid-State Circuits , 385 - 394
    3. 3)
      • H. Ishikawa , H. Kusakawa , K. Suyama , M. Fukuta . Normally-off type GaAs MESFET for low power, high speed logic circuits. ISSCC Digest of Technical Papers , 200 - 201
    4. 4)
      • H. Muta . Femto joule logic circuit with enhancement-type Schottky bairier gate FET. IEEE Trans. , 1023 - 1027
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