Structural and electrical profiles for double damage layers in ion-implanted silicon

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Structural and electrical profiles for double damage layers in ion-implanted silicon

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© The Institution of Electrical Engineers
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(111) Si specimens were implanted at room temperature with 5 × 1014 cm−2, 120 keVP+ ions, and annealed at 950°C. Transmission electron-microscope cross-section specimens revealed two discrete damage layers at depths of 95 and 190 nm. Electrical profiles showed decreases in carrier concentration and/or mobility at these two depths.

Inspec keywords: carrier mobility; ion implantation; carrier density; transmission electron microscope examination of materials; elemental semiconductors; silicon

Other keywords: mobility; Si; electrical profiles; ion implanted Si; double damage layers; carrier concentration

Subjects: Low-field transport and mobility; piezoresistance (semiconductors/insulators); Elemental semiconductors; Doping and implantation of impurities; Ion beam effects; Semiconductor doping; Electrical conductivity of elemental semiconductors

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